IndiumV3, Main, Repository, bibRecord, 001242

1.9 μm hybrid silicon/III-V semiconductor laser

Identifieur interne : 001242 ( Main/Repository ); précédent : 001241; suivant : 001243

1.9 μm hybrid silicon/III-V semiconductor laser

Auteurs : RBID : Pascal:13-0191070

Descripteurs français

Pascal (Inist)
- Puits quantique multiple, Technologie silicium sur isolant, Laser semiconducteur, Fixation pastille, Arséniure de gallium, Arséniure d'indium, Phosphure d'indium, Guide onde, Section variable, Température ambiante, Transition, Seuil, Silicium, Semiconducteur III-V.

English descriptors

KwdEn :
- Ambient temperature, Gallium arsenides, III-V semiconductors, Indium arsenides, Indium phosphide, Multiple quantum well, Semiconductor lasers, Silicon, Silicon-on-insulator, Threshold, Transition, Variable section, Wafer bonding, Waveguides.

Abstract

A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.

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Pascal:13-0191070

Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Multiple quantum well</term>
<term>Semiconductor lasers</term>
<term>Silicon</term>
<term>Silicon-on-insulator</term>
<term>Threshold</term>
<term>Transition</term>
<term>Variable section</term>
<term>Wafer bonding</term>
<term>Waveguides</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Puits quantique multiple</term>
<term>Technologie silicium sur isolant</term>
<term>Laser semiconducteur</term>
<term>Fixation pastille</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'indium</term>
<term>Phosphure d'indium</term>
<term>Guide onde</term>
<term>Section variable</term>
<term>Température ambiante</term>
<term>Transition</term>
<term>Seuil</term>
<term>Silicium</term>
<term>Semiconducteur III-V</term>
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<front><div type="abstract" xml:lang="en">A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.</div>
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<fC01 i1="01" l="ENG"><s0>A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.</s0>
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<fN44 i1="01"><s1>OTO</s1>
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1.9 μm hybrid silicon/III-V semiconductor laser

1.9 μm hybrid silicon/III-V semiconductor laser

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Abstract

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